APA引文

MING, Y., & PHYSICS. (2010). Surface passivation and high-k dielectrics integration of Ge-based FETs: First-principles calculations and in situ characterizations.

Chicago Style Citation

MING, YANG, and PHYSICS. Surface Passivation and High-k Dielectrics Integration of Ge-based FETs: First-principles Calculations and in Situ Characterizations. 2010.

MLA引文

MING, YANG, and PHYSICS. Surface Passivation and High-k Dielectrics Integration of Ge-based FETs: First-principles Calculations and in Situ Characterizations. 2010.

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