APA引文

Bussolotti, F., Chai, J., Yang, M., Kawai, H., Zhang, Z., Wang, S., . . . PHYSICS. (2020). Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: Band structure and energy level alignment at layer/substrate interfaces.

Chicago Style Citation

Bussolotti, F., et al. Electronic Properties of Atomically Thin MoS2 Layers Grown By Physical Vapour Deposition: Band Structure and Energy Level Alignment At Layer/substrate Interfaces. 2020.

MLA引文

Bussolotti, F., et al. Electronic Properties of Atomically Thin MoS2 Layers Grown By Physical Vapour Deposition: Band Structure and Energy Level Alignment At Layer/substrate Interfaces. 2020.

警告:這些引文格式不一定是100%准確.