Top-down Si nanowire technology in discrete charge storage nonvolatile memory application
Ph.D
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2010
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sg-nus-scholar.10635-180052017-10-21T08:34:21Z Top-down Si nanowire technology in discrete charge storage nonvolatile memory application FU JIA ELECTRICAL & COMPUTER ENGINEERING ZHU CHUNXIANG YU MINGBIN Gate-all-around, Nanowire, SONOS, Nonvolatile Memory, Poly-Si, High-k Ph.D DOCTOR OF PHILOSOPHY 2010-09-03T18:00:55Z 2010-09-03T18:00:55Z 2009-08-03 Thesis FU JIA (2009-08-03). Top-down Si nanowire technology in discrete charge storage nonvolatile memory application. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/18005 NOT_IN_WOS en |
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National University of Singapore |
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English |
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Gate-all-around, Nanowire, SONOS, Nonvolatile Memory, Poly-Si, High-k |
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Gate-all-around, Nanowire, SONOS, Nonvolatile Memory, Poly-Si, High-k FU JIA Top-down Si nanowire technology in discrete charge storage nonvolatile memory application |
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Ph.D |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING FU JIA |
format |
Theses and Dissertations |
author |
FU JIA |
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FU JIA |
title |
Top-down Si nanowire technology in discrete charge storage nonvolatile memory application |
title_short |
Top-down Si nanowire technology in discrete charge storage nonvolatile memory application |
title_full |
Top-down Si nanowire technology in discrete charge storage nonvolatile memory application |
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Top-down Si nanowire technology in discrete charge storage nonvolatile memory application |
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Top-down Si nanowire technology in discrete charge storage nonvolatile memory application |
title_sort |
top-down si nanowire technology in discrete charge storage nonvolatile memory application |
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2010 |
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http://scholarbank.nus.edu.sg/handle/10635/18005 |
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1681079534561001472 |