Mishra, R., Kim, T., Park, J., Yang, H., & ENGINEERING, E. A. C. (2024). Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory.
استشهاد بنمط شيكاغوMishra, Rahul, Taehwan Kim, Jongsun Park, Hyunsoo Yang, و ELECTRICAL AND COMPUTER ENGINEERING. Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory. 2024.
MLA استشهادMishra, Rahul, et al. Shared-Write-Channel-Based Device for High-Density Spin-Orbit-Torque Magnetic Random-Access Memory. 2024.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.