Gao, F., Lee, S., Kwong, D., & ENGINEERING, E. &. C. (2014). Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain.
Chicago Style CitationGao, F., S.J Lee, D.L Kwong, and ELECTRICAL & COMPUTER ENGINEERING. Enhancement Mode GaAs Metal-oxide-semiconductor Field-effect-transistor Integrated With Thin AlN Surface Passivation Layer and Silicon/phosphorus Coimplanted Source/drain. 2014.
MLA CitationGao, F., S.J Lee, D.L Kwong, and ELECTRICAL & COMPUTER ENGINEERING. Enhancement Mode GaAs Metal-oxide-semiconductor Field-effect-transistor Integrated With Thin AlN Surface Passivation Layer and Silicon/phosphorus Coimplanted Source/drain. 2014.