Zhang, J., Hao, M., Li, P., Chua, S., & ENGINEERING, E. &. C. (2014). InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant.
Chicago Style CitationZhang, J., M. Hao, P. Li, S.J Chua, and ELECTRICAL & COMPUTER ENGINEERING. InGaN Self-assembled Quantum Dots Grown By Metalorganic Chemical-vapor Deposition With Indium As the Antisurfactant. 2014.
MLA CitationZhang, J., et al. InGaN Self-assembled Quantum Dots Grown By Metalorganic Chemical-vapor Deposition With Indium As the Antisurfactant. 2014.
Warning: These citations may not always be 100% accurate.