Zhang, J., Hao, M., Li, P., Chua, S., & ENGINEERING, E. &. C. (2014). InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant.
Chicago Style CitationZhang, J., M. Hao, P. Li, S.J Chua, and ELECTRICAL & COMPUTER ENGINEERING. InGaN Self-assembled Quantum Dots Grown By Metalorganic Chemical-vapor Deposition With Indium As the Antisurfactant. 2014.
MLA引文Zhang, J., et al. InGaN Self-assembled Quantum Dots Grown By Metalorganic Chemical-vapor Deposition With Indium As the Antisurfactant. 2014.
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