APA引文

Tan, K., Liow, T., Lee, R., Hoe, K., Tung, C., Balasubramanian, N., . . . ENGINEERING, E. &. C. (2014). Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressors.

Chicago Style Citation

Tan, K.-M., T.-Y Liow, R.T.P Lee, K.M Hoe, C.-H Tung, N. Balasubramanian, G.S Samudra, Y.-C Yeo, and ELECTRICAL & COMPUTER ENGINEERING. Strained P-channel FinFETs With Extended Π-shaped Silicon-germanium Source and Drain Stressors. 2014.

MLA引文

Tan, K.-M., et al. Strained P-channel FinFETs With Extended Π-shaped Silicon-germanium Source and Drain Stressors. 2014.

警告:這些引文格式不一定是100%准確.