Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques

10.1016/S0080-8784(08)60234-3

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Main Authors:	Li, M.-f., Yu, P.Y.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/61925
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-619252023-10-30T07:52:40Z Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques Li, M.-f. Yu, P.Y. ELECTRICAL ENGINEERING 10.1016/S0080-8784(08)60234-3 Semiconductors and Semimetals 54 C 457-484 2014-06-17T06:45:31Z 2014-06-17T06:45:31Z 1998 Article Li, M.-f., Yu, P.Y. (1998). Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques. Semiconductors and Semimetals 54 (C) : 457-484. ScholarBank@NUS Repository. https://doi.org/10.1016/S0080-8784(08)60234-3 00808784 http://scholarbank.nus.edu.sg/handle/10635/61925 000079453600006 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1016/S0080-8784(08)60234-3
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Li, M.-f. Yu, P.Y.
format	Article
author	Li, M.-f. Yu, P.Y.
spellingShingle	Li, M.-f. Yu, P.Y. Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques
author_sort	Li, M.-f.
title	Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques
title_short	Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques
title_full	Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques
title_fullStr	Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques
title_full_unstemmed	Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques
title_sort	chapter 5.2 high-pressure study of dx centers using capacitance techniques
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/61925
_version_	1781782121589768192

Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques

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