Investigation of dislocations in GaAs using cathodoluminescence in the scanning electron microscope

• Main Authors: Pey, K.L., Phang, J.C.H., Chan, D.S.H., Balk, L.J., Jakubowicz, A., Bresse, J.F., Myhajlenko, S.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Cathodoluminescence; cathodoluminescence contrast; dislocation; GaAs; preferential etching; scanning electron microscope
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/62355
• Institution: National University of Singapore

Scanning Microscopy