Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides

10.1109/55.761026

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Bibliographic Details
Main Authors:	Guan, H., Zhang, Y., Jie, B.B., He, Y.D., Li, M.-F., Dong, Z., Xie, J., Wang, J.L.F., Yen, A.C., Sheng, G.T.T., Li, W.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/62487
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-62487
record_format	dspace
spelling	sg-nus-scholar.10635-624872023-10-26T21:21:19Z Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides Guan, H. Zhang, Y. Jie, B.B. He, Y.D. Li, M.-F. Dong, Z. Xie, J. Wang, J.L.F. Yen, A.C. Sheng, G.T.T. Li, W. ELECTRICAL ENGINEERING 10.1109/55.761026 IEEE Electron Device Letters 20 5 238-240 EDLED 2014-06-17T06:51:37Z 2014-06-17T06:51:37Z 1999-05 Article Guan, H., Zhang, Y., Jie, B.B., He, Y.D., Li, M.-F., Dong, Z., Xie, J., Wang, J.L.F., Yen, A.C., Sheng, G.T.T., Li, W. (1999-05). Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides. IEEE Electron Device Letters 20 (5) : 238-240. ScholarBank@NUS Repository. https://doi.org/10.1109/55.761026 07413106 http://scholarbank.nus.edu.sg/handle/10635/62487 000080066700015 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/55.761026
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Guan, H. Zhang, Y. Jie, B.B. He, Y.D. Li, M.-F. Dong, Z. Xie, J. Wang, J.L.F. Yen, A.C. Sheng, G.T.T. Li, W.
format	Article
author	Guan, H. Zhang, Y. Jie, B.B. He, Y.D. Li, M.-F. Dong, Z. Xie, J. Wang, J.L.F. Yen, A.C. Sheng, G.T.T. Li, W.
spellingShingle	Guan, H. Zhang, Y. Jie, B.B. He, Y.D. Li, M.-F. Dong, Z. Xie, J. Wang, J.L.F. Yen, A.C. Sheng, G.T.T. Li, W. Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides
author_sort	Guan, H.
title	Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides
title_short	Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides
title_full	Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides
title_fullStr	Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides
title_full_unstemmed	Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides
title_sort	nondestructive dciv method to evaluate plasma charging damage in ultrathin gate oxides
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/62487
_version_	1781782150265176064

Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides

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