APA引文

Chi, D., Yao, H., Liew, S., Tan, C., Chua, C., Chua, K., . . . ENGINEERING, E. &. C. (2014). Schottky barrier height in germanide/Ge contacts and its engineering through germanidation induced dopant segregation.

Chicago Style Citation

Chi, D.Z., H.B Yao, S.L Liew, C.C Tan, C.T Chua, K.C Chua, R. Li, S.J Lee, and ELECTRICAL & COMPUTER ENGINEERING. Schottky Barrier Height in Germanide/Ge Contacts and Its Engineering Through Germanidation Induced Dopant Segregation. 2014.

MLA引文

Chi, D.Z., et al. Schottky Barrier Height in Germanide/Ge Contacts and Its Engineering Through Germanidation Induced Dopant Segregation. 2014.