Ho, C., Pey, K., Tung, C., Zhang, B., Tee, K., Karunasiri, G., . . . ENGINEERING, E. (2014). Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction.
استشهاد بنمط شيكاغوHo, C.S., K.L Pey, C.H Tung, B.C Zhang, K.C Tee, G. Karunasiri, S.J Chua, و ELECTRICAL ENGINEERING. Uniform Void-free Epitaxial CoSi 2 Formation On STI Bounded Narrow Si(lOO) Lines By Template Layer Stress Reduction. 2014.
MLA استشهادHo, C.S., et al. Uniform Void-free Epitaxial CoSi 2 Formation On STI Bounded Narrow Si(lOO) Lines By Template Layer Stress Reduction. 2014.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.