Ho, C., Pey, K., Tung, C., Zhang, B., Tee, K., Karunasiri, G., . . . ENGINEERING, E. (2014). Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction.
Chicago Style CitationHo, C.S., K.L Pey, C.H Tung, B.C Zhang, K.C Tee, G. Karunasiri, S.J Chua, and ELECTRICAL ENGINEERING. Uniform Void-free Epitaxial CoSi 2 Formation On STI Bounded Narrow Si(lOO) Lines By Template Layer Stress Reduction. 2014.
MLA CitationHo, C.S., et al. Uniform Void-free Epitaxial CoSi 2 Formation On STI Bounded Narrow Si(lOO) Lines By Template Layer Stress Reduction. 2014.
Warning: These citations may not always be 100% accurate.