APA引文

Ho, C., Pey, K., Tung, C., Zhang, B., Tee, K., Karunasiri, G., . . . ENGINEERING, E. (2014). Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction.

Chicago Style Citation

Ho, C.S., K.L Pey, C.H Tung, B.C Zhang, K.C Tee, G. Karunasiri, S.J Chua, and ELECTRICAL ENGINEERING. Uniform Void-free Epitaxial CoSi 2 Formation On STI Bounded Narrow Si(lOO) Lines By Template Layer Stress Reduction. 2014.

MLA引文

Ho, C.S., et al. Uniform Void-free Epitaxial CoSi 2 Formation On STI Bounded Narrow Si(lOO) Lines By Template Layer Stress Reduction. 2014.