Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressing
Proceedings of the IEEE Hong Kong Electron Devices Meeting
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| Main Authors: | , , , , |
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| 格式: | Conference or Workshop Item |
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2014
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| 在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/81384 |
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