Koh, S., Kong, E., Liu, B., Ng, C., Samudra, G., Yeo, Y., & ENGINEERING, E. &. C. (2014). Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation.

Koh, S.-M., E.Y.-J Kong, B. Liu, C.-M Ng, G.S Samudra, Y.-C Yeo, and ELECTRICAL & COMPUTER ENGINEERING. Contact-resistance Reduction for Strained N-FinFETs With Silicon-carbon Source/drain and Platinum-based Silicide Contacts Featuring Tellurium Implantation and Segregation. 2014.

Koh, S.-M., et al. Contact-resistance Reduction for Strained N-FinFETs With Silicon-carbon Source/drain and Platinum-based Silicide Contacts Featuring Tellurium Implantation and Segregation. 2014.