Text this: Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation

  ______   _    _     _____     _____    _    _   
 /_   _// | || | ||  / ____||  |  ___|| | || | || 
 `-| |,-  | || | || / //---`'  | ||__   | || | || 
   | ||   | \\_/ || \ \\___    | ||__   | \\_/ || 
   |_||    \____//   \_____||  |_____||  \____//  
   `-`'     `---`     `----`   `-----`    `---`