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  ______    ______   __   _      ___      _  _   
 /_   _//  /_   _// | || | ||   / _ \\   | \| || 
   | ||     -| ||-  | '--' ||  / //\ \\  |  ' || 
  _| ||     _| ||_  | .--. || |  ___  || | .  || 
 /__//     /_____// |_|| |_|| |_||  |_|| |_|\_|| 
 `--`      `-----`  `-`  `-`  `-`   `-`  `-` -`

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Text this: Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation