Antwi, K., Soh, C., Wee, Q., Tan, R., Yang, P., Tan, H., . . . ENGINEERING, E. &. C. (2014). Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate.
استشهاد بنمط شيكاغوAntwi, K.K.A., et al. Crystallographically Tilted and Partially Strain Relaxed GaN Grown On Inclined {111} Facets Etched On Si(100) Substrate. 2014.
MLA استشهادAntwi, K.K.A., et al. Crystallographically Tilted and Partially Strain Relaxed GaN Grown On Inclined {111} Facets Etched On Si(100) Substrate. 2014.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.