發送短信 : Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

 _    _    __   __     _____     ___       _____  
| |  | ||  \ \\/ //   / ___//   / _ \\    / ___// 
| |/\| ||   \ ` //    \___ \\  / //\ \\   \___ \\ 
|  /\  ||    | ||     /    // |  ___  ||  /    // 
|_// \_||    |_||    /____//  |_||  |_|| /____//  
`-`   `-`    `-`'   `-----`   `-`   `-` `-----`