Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics

10.1088/0268-1242/21/10/004

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Main Authors:	Samanta, P., Man, T.Y., Chan, A.C.K., Zhang, Q., Zhu, C., Chan, M.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82322
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-823222023-10-27T07:29:42Z Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics Samanta, P. Man, T.Y. Chan, A.C.K. Zhang, Q. Zhu, C. Chan, M. ELECTRICAL & COMPUTER ENGINEERING 10.1088/0268-1242/21/10/004 Semiconductor Science and Technology 21 10 1393-1401 SSTEE 2014-10-07T04:28:00Z 2014-10-07T04:28:00Z 2006-10-10 Article Samanta, P., Man, T.Y., Chan, A.C.K., Zhang, Q., Zhu, C., Chan, M. (2006-10-10). Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics. Semiconductor Science and Technology 21 (10) : 1393-1401. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/21/10/004 02681242 http://scholarbank.nus.edu.sg/handle/10635/82322 000242578100004 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1088/0268-1242/21/10/004
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Samanta, P. Man, T.Y. Chan, A.C.K. Zhang, Q. Zhu, C. Chan, M.
format	Article
author	Samanta, P. Man, T.Y. Chan, A.C.K. Zhang, Q. Zhu, C. Chan, M.
spellingShingle	Samanta, P. Man, T.Y. Chan, A.C.K. Zhang, Q. Zhu, C. Chan, M. Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics
author_sort	Samanta, P.
title	Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics
title_short	Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics
title_full	Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics
title_fullStr	Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics
title_full_unstemmed	Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics
title_sort	experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82322
_version_	1781784108569985024

Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics

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