Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices

Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices

10.1063/1.3475721

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Bibliographic Details
Main Authors: Fang, L.W.-W., Zhang, Z., Zhao, R., Pan, J., Li, M., Shi, L., Chong, T.-C., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82353
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Institution: National University of Singapore
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Summary:10.1063/1.3475721

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