Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices

10.1063/1.3475721

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Bibliographic Details
Main Authors:	Fang, L.W.-W., Zhang, Z., Zhao, R., Pan, J., Li, M., Shi, L., Chong, T.-C., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82353
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82353
record_format	dspace
spelling	sg-nus-scholar.10635-823532023-10-30T23:07:09Z Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices Fang, L.W.-W. Zhang, Z. Zhao, R. Pan, J. Li, M. Shi, L. Chong, T.-C. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.3475721 Journal of Applied Physics 108 5 - JAPIA 2014-10-07T04:28:21Z 2014-10-07T04:28:21Z 2010-09-01 Article Fang, L.W.-W., Zhang, Z., Zhao, R., Pan, J., Li, M., Shi, L., Chong, T.-C., Yeo, Y.-C. (2010-09-01). Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices. Journal of Applied Physics 108 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3475721 00218979 http://scholarbank.nus.edu.sg/handle/10635/82353 000282478900041 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.3475721
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Fang, L.W.-W. Zhang, Z. Zhao, R. Pan, J. Li, M. Shi, L. Chong, T.-C. Yeo, Y.-C.
format	Article
author	Fang, L.W.-W. Zhang, Z. Zhao, R. Pan, J. Li, M. Shi, L. Chong, T.-C. Yeo, Y.-C.
spellingShingle	Fang, L.W.-W. Zhang, Z. Zhao, R. Pan, J. Li, M. Shi, L. Chong, T.-C. Yeo, Y.-C. Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices
author_sort	Fang, L.W.-W.
title	Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices
title_short	Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices
title_full	Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices
title_fullStr	Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices
title_full_unstemmed	Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices
title_sort	fermi-level pinning and charge neutrality level in nitrogen-doped ge 2 sb2 te5: characterization and application in phase change memory devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82353
_version_	1781784116654505984

Fermi-level pinning and charge neutrality level in nitrogen-doped Ge 2 Sb2 Te5: Characterization and application in phase change memory devices

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