Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivation

Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivation

10.1109/LED.2012.2236880

Saved in:
Bibliographic Details
Main Authors: Gong, X., Han, G., Bai, F., Su, S., Guo, P., Yang, Y., Cheng, R., Zhang, D., Zhang, G., Xue, C., Cheng, B., Pan, J., Zhang, Z., Tok, E.S., Antoniadis, D., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
(100) and (111) surface orientations
GeSn p-channel metal-oxide- semiconductor field-effect transistors (pMOSFETs)
Si2H6 passivation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82415
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1109/LED.2012.2236880

Similar Items