Oh, H., Suleiman, S., Lee, S., & ENGINEERING, E. &. C. (2014). Interface engineering for InGaAs n-MOSFET application using plasma PH 3-N2 passivation.
استشهاد بنمط شيكاغوOh, H.-J., S.A.B Suleiman, S. Lee, و ELECTRICAL & COMPUTER ENGINEERING. Interface Engineering for InGaAs N-MOSFET Application Using Plasma PH 3-N2 Passivation. 2014.
MLA استشهادOh, H.-J., S.A.B Suleiman, S. Lee, و ELECTRICAL & COMPUTER ENGINEERING. Interface Engineering for InGaAs N-MOSFET Application Using Plasma PH 3-N2 Passivation. 2014.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.