APA引文

Koh, S., Wang, X., Sekar, K., Krull, W., Samudra, G., Yeo, Y., & ENGINEERING, E. &. C. (2014). Silicon-carbon formed using cluster-carbon implant and laser-induced epitaxy for application as source/drain stressors in strained n-channel MOSFETs.

Chicago Style Citation

Koh, S.-M., X. Wang, K. Sekar, W. Krull, G.S Samudra, Y.-C Yeo, and ELECTRICAL & COMPUTER ENGINEERING. Silicon-carbon Formed Using Cluster-carbon Implant and Laser-induced Epitaxy for Application As Source/drain Stressors in Strained N-channel MOSFETs. 2014.

MLA引文

Koh, S.-M., et al. Silicon-carbon Formed Using Cluster-carbon Implant and Laser-induced Epitaxy for Application As Source/drain Stressors in Strained N-channel MOSFETs. 2014.