APA引文

Gong, X., Chin, H., Koh, S., Wang, L., Ivana, Zhu, Z., . . . ENGINEERING, E. &. C. (2014). Source/drain engineering for In0.7Ga0.3As N-channel metal-oxide-semiconductor field-effect transistors. Raised source/drain with in situ doping for series resistance reduction.

Chicago Style Citation

Gong, X., et al. Source/drain Engineering for In0.7Ga0.3As N-channel Metal-oxide-semiconductor Field-effect Transistors. Raised Source/drain With in Situ Doping for Series Resistance Reduction. 2014.

MLA引文

Gong, X., et al. Source/drain Engineering for In0.7Ga0.3As N-channel Metal-oxide-semiconductor Field-effect Transistors. Raised Source/drain With in Situ Doping for Series Resistance Reduction. 2014.