發送短信 : The role of nitrogen on charge-trapping-induced Vth instability in HfAlON high-κ gate dielectric with metal and poly-Si gate electrodes

            ______    ____      _____             
  ____     /_   _//  |  _ \\   |  ___||     ___   
 |    \\    -| ||-   | |_| ||  | ||__      /   || 
 | [] ||    _| ||_   | .  //   | ||__     | [] || 
 |  __//   /_____//  |_|\_\\   |_____||    \__ || 
 |_|`-`    `-----`   `-` --`   `-----`      -|_|| 
 `-`                                         `-`