APA استشهاد

Shen, C., Li, M., Foo, C., Yang, T., Huang, D., Yaps, A., . . . ENGINEERING, E. &. C. (2014). Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric.

استشهاد بنمط شيكاغو

Shen, C., M.-F Li, C.E Foo, T. Yang, D.M Huang, A. Yaps, G.S Samudra, Y.-C Yeo, و ELECTRICAL & COMPUTER ENGINEERING. Characterization and Physical Origin of Fast Vth Transient in NBTI of PMOSFETs With SiON Dielectric. 2014.

MLA استشهاد

Shen, C., et al. Characterization and Physical Origin of Fast Vth Transient in NBTI of PMOSFETs With SiON Dielectric. 2014.

تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.