Shen, C., Li, M., Foo, C., Yang, T., Huang, D., Yaps, A., . . . ENGINEERING, E. &. C. (2014). Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric.
استشهاد بنمط شيكاغوShen, C., M.-F Li, C.E Foo, T. Yang, D.M Huang, A. Yaps, G.S Samudra, Y.-C Yeo, و ELECTRICAL & COMPUTER ENGINEERING. Characterization and Physical Origin of Fast Vth Transient in NBTI of PMOSFETs With SiON Dielectric. 2014.
MLA استشهادShen, C., et al. Characterization and Physical Origin of Fast Vth Transient in NBTI of PMOSFETs With SiON Dielectric. 2014.
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