Shen, C., Li, M., Foo, C., Yang, T., Huang, D., Yaps, A., . . . ENGINEERING, E. &. C. (2014). Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric.
Chicago Style CitationShen, C., M.-F Li, C.E Foo, T. Yang, D.M Huang, A. Yaps, G.S Samudra, Y.-C Yeo, and ELECTRICAL & COMPUTER ENGINEERING. Characterization and Physical Origin of Fast Vth Transient in NBTI of PMOSFETs With SiON Dielectric. 2014.
MLA引文Shen, C., et al. Characterization and Physical Origin of Fast Vth Transient in NBTI of PMOSFETs With SiON Dielectric. 2014.
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