Gong, X., Su, S., Liu, B., Wang, L., Wang, W., Yang, Y., . . . ENGINEERING, E. &. C. (2014). Fabrication and negative bias temperature instability (NBTI) study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 passivation and HfO2 High-k and TaN metal Gate.
Chicago Style CitationGong, X., et al. Fabrication and Negative Bias Temperature Instability (NBTI) Study On Ge0.97Sn0.03 P-MOSFETs With Si2H6 Passivation and HfO2 High-k and TaN Metal Gate. 2014.
MLA CitationGong, X., et al. Fabrication and Negative Bias Temperature Instability (NBTI) Study On Ge0.97Sn0.03 P-MOSFETs With Si2H6 Passivation and HfO2 High-k and TaN Metal Gate. 2014.
Warning: These citations may not always be 100% accurate.