APA Citation

Gao, F., Lee, S., Li, R., Whang, S., Balakumar, S., Chi, D., . . . ENGINEERING, E. &. C. (2014). GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack.

Chicago Style Citation

Gao, F., et al. GaAs P- and N-MOS Devices Integrated With Novel Passivation (plasma Nitridation and AlN-surface Passivation) Techniques and ALD-HfO2/TaN Gate Stack. 2014.

MLA Citation

Gao, F., et al. GaAs P- and N-MOS Devices Integrated With Novel Passivation (plasma Nitridation and AlN-surface Passivation) Techniques and ALD-HfO2/TaN Gate Stack. 2014.

Warning: These citations may not always be 100% accurate.