發送短信 : GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack

  _____    _    _   __    __     ___      _____   
 |__  //  | || | || \ \\ / //   / _ \\   / ____|| 
   / //   | || | ||  \ \/ //   | / \ || / //---`' 
  / //__  | \\_/ ||   \  //    | \_/ || \ \\___   
 /_____||  \____//     \//      \___//   \_____|| 
 `-----`    `---`       `       `---`     `----`