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| \  / || | || | ||  /  ___||  |  ___||  |__  //  
|  \/  || | || | || | // __    | ||__      / //   
| .  . || | \\_/ || | \\_\ ||  | ||__     / //__  
|_|\/|_||  \____//   \____//   |_____||  /_____|| 
`-`  `-`    `---`     `---`    `-----`   `-----`

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Text this: GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack