APA引文

Han, G., Su, S., Zhan, C., Zhou, Q., Yang, Y., Wang, L., . . . ENGINEERING, E. &. C. (2014). High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370°C process modules.

Chicago Style Citation

Han, G., et al. High-mobility Germanium-tin (GeSn) P-channel MOSFETs Featuring Metallic Source/drain and Sub-370°C Process Modules. 2014.

MLA引文

Han, G., et al. High-mobility Germanium-tin (GeSn) P-channel MOSFETs Featuring Metallic Source/drain and Sub-370°C Process Modules. 2014.