Tian, F., Chor, E., & ENGINEERING, E. &. C. (2014). Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs.
Chicago Style CitationTian, F., E.F Chor, and ELECTRICAL & COMPUTER ENGINEERING. Impact of Al2O3 Incorporation On Device Performance of HfO2 Gate Dielectric AlGaN/GaN MIS-HFETs. 2014.
MLA CitationTian, F., E.F Chor, and ELECTRICAL & COMPUTER ENGINEERING. Impact of Al2O3 Incorporation On Device Performance of HfO2 Gate Dielectric AlGaN/GaN MIS-HFETs. 2014.
Warning: These citations may not always be 100% accurate.