Chin, H., Zhu, M., Whang, S., Tung, C., Samudra, G., Yeo, Y., & ENGINEERING, E. &. C. (2014). In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistors.
Chicago Style CitationChin, H.-C., M. Zhu, S.-J Whang, C.-H Tung, G.S Samudra, Y.-C Yeo, and ELECTRICAL & COMPUTER ENGINEERING. In-situ Surface Passivation and Metal-gate/high-k Dielectric Stack Formation for N-channel Gallium Arsenide Metal-oxide-semiconductor Field-effect Transistors. 2014.
MLA CitationChin, H.-C., et al. In-situ Surface Passivation and Metal-gate/high-k Dielectric Stack Formation for N-channel Gallium Arsenide Metal-oxide-semiconductor Field-effect Transistors. 2014.
Warning: These citations may not always be 100% accurate.