Koh, S., Zhou, Q., Thanigaivelan, T., Henry, T., Samudra, G., Yeo, Y., & ENGINEERING, E. &. C. (2014). Novel technique to engineer aluminum profile at nickel-silicide/silicon: Carbon interface for contact resistance reduction, and integration in strained N-MOSFETs with silicon-carbon stressors.

Koh, S.-M., Q. Zhou, T. Thanigaivelan, T. Henry, G.S Samudra, Y.C Yeo, و ELECTRICAL & COMPUTER ENGINEERING. Novel Technique to Engineer Aluminum Profile At Nickel-silicide/silicon: Carbon Interface for Contact Resistance Reduction, and Integration in Strained N-MOSFETs With Silicon-carbon Stressors. 2014.

Koh, S.-M., et al. Novel Technique to Engineer Aluminum Profile At Nickel-silicide/silicon: Carbon Interface for Contact Resistance Reduction, and Integration in Strained N-MOSFETs With Silicon-carbon Stressors. 2014.