Chin, H., Gong, X., Guo, H., Zhou, Q., Koh, S., Lee, H., . . . ENGINEERING, E. &. C. (2014). Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress.
Chicago Style CitationChin, H.-C., X. Gong, H. Guo, Q. Zhou, S.-M Koh, H.K Lee, L. Shi, Y.-C Yeo, and ELECTRICAL & COMPUTER ENGINEERING. Performance Boost for In0.53Ga0.47As Channel N-MOSFET Using Silicon Nitride Liner Stressor With High Tensile Stress. 2014.
MLA CitationChin, H.-C., et al. Performance Boost for In0.53Ga0.47As Channel N-MOSFET Using Silicon Nitride Liner Stressor With High Tensile Stress. 2014.
Warning: These citations may not always be 100% accurate.