APA引文

Song, T., Chua, S., Fitzgerald, E., & ENGINEERING, E. &. C. (2014). Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906)).

Chicago Style Citation

Song, T.L., S.J Chua, E.A Fitzgerald, and ELECTRICAL & COMPUTER ENGINEERING. Erratum: Strain Relaxation Due to V-pit Formation in In XGa 1-xN/GaN Epilayers Grown On Sapphire (Journal of Applied Physics (2005) 98 (084906)). 2014.

MLA引文

Song, T.L., S.J Chua, E.A Fitzgerald, and ELECTRICAL & COMPUTER ENGINEERING. Erratum: Strain Relaxation Due to V-pit Formation in In XGa 1-xN/GaN Epilayers Grown On Sapphire (Journal of Applied Physics (2005) 98 (084906)). 2014.