Effects of prolonged annealing on NiSi at low temperature (500°C)

Effects of prolonged annealing on NiSi at low temperature (500°C)

Journal of Electronic Materials

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Bibliographic Details
Main Authors: Anisur, M.R., Osipowicz, T., Chi, D.Z., Wang, W.D.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
Agglomeration
Interface roughness
Nickel monosilicide (NiSi)
Prolonged annealing
Thermal stability
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96376
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Institution: National University of Singapore
Description
Summary:Journal of Electronic Materials

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