Yang, K., Wu, R., Shen, L., Feng, Y., Dai, Y., Huang, B., & PHYSICS. (2014). Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion site.

Yang, K., R. Wu, L. Shen, Y.P Feng, Y. Dai, B. Huang, و PHYSICS. Origin of D0 Magnetism in II-VI and III-V Semiconductors By Substitutional Doping At Anion Site. 2014.

Yang, K., et al. Origin of D0 Magnetism in II-VI and III-V Semiconductors By Substitutional Doping At Anion Site. 2014.