Huang, Y., Sun, W., Malikova, L., Pollak, F., Ferguson, I., Hou, H., . . . PHYSICS. (2014). Room-temperature photoluminescence, contactless electroreflectance, and X-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure.
Chicago Style CitationHuang, Y.S., et al. Room-temperature Photoluminescence, Contactless Electroreflectance, and X-ray Characterization of a Double-side Delta-doped GaAlAs/InGaAs High Electron Mobility Transistor Structure. 2014.
MLA引文Huang, Y.S., et al. Room-temperature Photoluminescence, Contactless Electroreflectance, and X-ray Characterization of a Double-side Delta-doped GaAlAs/InGaAs High Electron Mobility Transistor Structure. 2014.
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