APA引文

Tantraviwat, D., Yamwong, W., Techakijkajorn, U., Imai, K., & Inceesungvorn, B. (2018). Schottky barrier height engineering of ti/n-type silicon diode by means of ion implantation.

Chicago Style Citation

Tantraviwat, Doldet, Wittawat Yamwong, Udom Techakijkajorn, Kazuo Imai, and Burapat Inceesungvorn. Schottky Barrier Height Engineering of Ti/n-type Silicon Diode By Means of Ion Implantation. 2018.

MLA引文

Tantraviwat, Doldet, et al. Schottky Barrier Height Engineering of Ti/n-type Silicon Diode By Means of Ion Implantation. 2018.