Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOS

by Kaharudin K.E., Salehuddin F., Zain A.S.M., Aziz M.N.I.A., Ahmad I.
Published 2023

Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET Device

by Kaharudin K.E., Hamidon A.H., Salehuddin F., Ifwat Abd Aziz M.N., Ahmad I.
Published 2023

Electrical characterization of different high-k dielectrics with tungsten silicide in vertical double gate nmos structure

by Kaharudin K.E., Salehuddin F., Soin N., Zain A.S.M., Aziz M.N.I.A., Ahmad I.
Published 2023

Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET

by Kaharudin K.E., Salehuddin F., Zain A.S.M., Roslan A.F., Ahmad I.
Published 2023

Variability analysis of process parameters on subthreshold swing in vertical DG-MOSFET device

by Kaharudin K.E., Salehuddin F., Hamidon A.H., Zain A., Abd Aziz M.N.I., Ahmad I.
Published 2023

Taguchi modeling of process parameters in vdg-mosfet device for higher ION/IOFF ratio

by Kaharudin K.E., Salehuddin F., Hamidon A.H., Aziz M.N.I.A., Ahmad I.
Published 2023

Work function variations on electrostatic and RF performances of JLSDGM Device

by Kaharudin K.K.E., Zain A.S.M., Roslan A.F., Ahmad I., Salehuddin F.
Published 2023

PREDICTIVE ANALYTICS OF JUNCTIONLESS DOUBLE GATE STRAINED MOSFET USING GENETIC ALGORITHM WITH DOE-BASED GREY RELATIONAL ANALYSIS

by Kaharudin K.E., Salehuddin F., Jalaludin N.A., Arith F., Zain A.S.M., Ahmad I., Junos S.A.M.
Published 2024