Measuring pressure interface of local car seats under static and dynamic circumstances: a comparative study

by Khamis, N.K, Roslan, A.F, Deros, B.M, Ismail, A.R
Published 2018

Optimization of 16 nm DG-FinFET using L25 orthogonal array of Taguchi statistical method

by Roslan A.F., Salehuddin F., Zain A.S.M., Kaharudin K.E., Ahmad I.
Published 2023

Comparison of L25 GRA and L25 taguchi statistical method for optimizing 16 NM DG-FinFET on output variation

by Roslan A.F., Salehuddin F., Zain A.S.M., Kaharudin K.E., Ahmad I.
Published 2023

Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET

by Kaharudin K.E., Salehuddin F., Zain A.S.M., Roslan A.F., Ahmad I.
Published 2023

Enhanced performance of 19 single gate MOSFET with high permittivity dielectric material

by Roslan A.F., Salehuddin F., Zain A.S.M., Kaharudin K.E., Ahmad I.
Published 2023

Work function variations on electrostatic and RF performances of JLSDGM Device

by Kaharudin K.K.E., Zain A.S.M., Roslan A.F., Ahmad I., Salehuddin F.
Published 2023

Comparative high-K material gate spacer impact in DG-finfet parameter variations between two structures

by Roslan, A.F., Salehuddin, F., Zain, A.S.M., Kaharudin, K.E., Ahmad, I., Hazura, H., Hanim, A.R., Idris, S.K.
Published 2020

Comparative high-K material gate spacer impact in DG-finfet parameter variations between two structures

by Roslan A.F., Salehuddin F., Zain A.S.M., Kaharudin K.E., Ahmad I., Hazura H., Hanim A.R., Idris S.K.
Published 2023

Review: Identification of roadmap of fourth construction industrial revolution

by Lau, S. E. N., Zakaria, R., Aminudin, E., Chang, S. C., Abidin, N. I. A., Roslan, A. F., Abd. Hamid, Z., Mohd. Zain, M. Z., Lou, E.
Published 2019

Optimization of process parameter variations for 16nm DG-FinFET using Response Surface Methodology-Central Composite Design

by Roslan A.F., Salehuddin F., Zain A.S.M., Kaharudin K.E., Ahmad I., Hazura H., Hanim A.R., Idris S.K., Hamid A.M.A.
Published 2023

Minimum leakage current optimization on 22 nm SOI NMOS device with HfO2/WSix/Graphene gate structure using Taguchi method.

by Afifah Maheran A.H., Firhat E.N., Salehuddin F., Mohd Zain A.S., Ahmad I., Noor Faizah Z.A., Menon P.S., Elgomati H.A., Roslan A.F.
Published 2023

Statistical Optimization Influence on High Permittivity Gate Spacer in 16nm DG-FinFET Device

by Roslan A.F., Salehuddin F., Zain A.S.M., Kaharudin K.E., Mohamad N.R., Maheran A.H.A., Haroon H., Razak H.A., Idris S.K., Ahmad I.
Published 2023

Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method

by Roslan A.F., Kaharudin K.E., Salehuddin F., Zain A.S.M., Ahmad I., Faizah Z.A.N., Hazura H., Hanim A.R., Idris S.K., Zaiton A.M., Mohamad N.R., Hamid A.M.A.
Published 2023

Comparative Analysis of Process Parameter Variations in DGFinFET Device Using Statistical Methods

by Roslan A.F., Salehuddin F., M Zain A.S., Mansor N., Kaharudin K.E., Ahmad I., Hazura H., Hanim A.R., Idris S.K., Zaiton A.M., Zarina B.Z., Mohamad N.R., A Hamid A.M.
Published 2023