Comparative high-K material gate spacer impact in DG-finfet parameter variations between two structures
This paper investigates the impact of the high-K material gate spacer on short channel effects (SCEs) for the 16 nm double-gate FinFET (DG-FinFET), where depletion-layer widths of the source-drain corresponds to the channel length. Virtual fabrication process along with design modification throughou...
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| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
Institute of Advanced Engineering and Science
2023
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| Institution: | Universiti Tenaga Nasional |