Minimum leakage current optimization on 22 nm SOI NMOS device with HfO2/WSix/Graphene gate structure using Taguchi method.

by Afifah Maheran A.H., Firhat E.N., Salehuddin F., Mohd Zain A.S., Ahmad I., Noor Faizah Z.A., Menon P.S., Elgomati H.A., Roslan A.F.
Published 2023