Optoelectronic properties of improved GaN semiconductor on Si (111) using growth approaches and different interlayer’s

by Bablu Kumar Ghosh, Norfarariyanti Parimon, Akio Yamamoto
Published 2013

Improvement of the optical properties of GaN epilayers on Si(111): Impact of GaAs layer thickness on Si and pre‐growth strategy

by Bablu Kumar Ghosh, Akihiro Hashimoto, Akio Yamamoto
Published 2003

Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs

by Bablu K. Ghosh, ToruTanikawa, Akihiro Hashimoto, Akio Yamamoto, Yoshifumi Ito
Published 2003